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2014.09

2014.09.01 12:28

Uniaxially strained SiGe(111) and SiGe(100) grown on selectively ion-implanted substrates

“Uniaxially strained SiGe(111) and SiGe(100) grown on selectively ion-implanted substrates”K. Sawano, Y. Hoshi, S. Kubo, S. Yamada, K. Nakag...

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