• HOME
  • NEWS
  • 研究紹介

2013.01

2013.01.07 12:14

Room-temperature sign reversed spin accumulation signals in silicon-based devices using an atomical…

”Room-temperature sign reversed spin accumulation signals in silicon-based devices using an atomically smooth Fe3Si/Si(111) contact”Y. Fujit...

2013.01.01 12:14

Formation of compressively strained SiGe/Si(110) heterostructures and their characterization

“Formation of compressively strained SiGe/Si(110) heterostructures and their characterization”,K. Arimoto, T. Obata, H. Furukawa, J. Yamanak...

2013.01.01 10:05

Formation of compressively strained Si/S1-xCx/Si(100) heterostructures using gas-source molecular b…

“Formation of compressively strained Si/S1-xCx/Si(100) heterostructures using gas-source molecular beam epitaxy”,K. Arimoto, H. Furukawa, J....

Copyrights(C) Nanoelectronics laboratory, TOKYO CITY UNIVERSITY All Rights Reserved.

Powered byAmebaOwnd無料でホームページをつくろう