2013.09.01 12:16On the origin of the uniaxial strain induced in Si/Ge heterostructures with selective ion implantat…“On the origin of the uniaxial strain induced in Si/Ge heterostructures with selective ion implantation technique”K. Sawano, Y. Hoshi, S. Na...
2013.09.01 12:07Gas-source MBE growth of strain-relaxed Si1-xCx on Si (100) substratesKeisuke Arimoto, Shoichiro Sakai, Hiroshi Furukawa, Junji Yamanaka, Kiyokazu Nakagawa, Noritaka Usami, Yusuke Hoshi, Kentarou Sawano, Yasuhi...