• HOME
  • NEWS
  • 研究紹介

2016.02

2016.02.04 12:34

Suppression of segregation of the phosphorus δ-doping layer in germanium by incorporation of carbon

“Suppression of segregation of the phosphorus δ-doping layer in germanium by incorporation of carbon”Michihiro Yamada, Kentarou Sawano, Masa...

2016.02.01 12:35

Compressively strained Si/Si1-xCx heterostructures formed on Ar ion implanted Si(100) substrates

“Compressively strained Si/Si1-xCx heterostructures formed on Ar ion implanted Si(100) substrates”Yusuke Hoshi, You Arisawa, Keisuke Arimoto...

Copyrights(C) Nanoelectronics laboratory, TOKYO CITY UNIVERSITY All Rights Reserved.

Powered byAmebaOwnd無料でホームページをつくろう