2017.04.30 12:27Highly n-doped, tensile-strained Ge grown on Si by molecular beam epitaxy“Highly n-doped, tensile-strained Ge grown on Si by molecular beam epitaxy”Keisuke Nishida, Xuejun Xu, Kentarou Sawano, Takuya Maruizumi, Ya...
2017.04.14 12:47Large impact of impurity concentration on spin transport in degenerate n-Ge“Large impact of impurity concentration on spin transport in degenerate n-Ge”M. Yamada, Y. Fujita, M. Tsukahara, S. Yamada, K. Sawano, and K...
2017.04.03 12:42Pattern-dependent anisotropic stress evaluation in SiGe epitaxially grown on a Si substrate with se…“Pattern-dependent anisotropic stress evaluation in SiGe epitaxially grown on a Si substrate with selective Ar+ ion implantation using oil-i...