2017.11.14 06:29Hole generation associated with intrinsic defects in SOI-based SiGe thin films formed by solid-sour…(111)“Hole generation associated with intrinsic defects in SOI-based SiGe thin films formed by solid-source molecular beam epitaxy”Motoki Sa...
2017.11.11 12:44Thermal stability of compressively strained Si/relaxed Si1-xCx heterostructures formed on Ar ion im…“Thermal stability of compressively strained Si/relaxed Si1-xCx heterostructures formed on Ar ion implanted Si (100) substrates”You Arisawa,...
2017.11.01 12:49Light emission enhancement from Ge quantum dots with phosphorous δ-doped neighboring confinement st…“Light emission enhancement from Ge quantum dots with phosphorous δ-doped neighboring confinement structures”K. Sawano, T. Nakama, K. Mizuta...
2017.11.01 12:40Control of electrical properties in Heusler-alloy/Ge Schottky tunnel contacts by using phosphorous …“Control of electrical properties in Heusler-alloy/Ge Schottky tunnel contacts by using phosphorous δ-doping with Si-layer insertion” Michih...
2017.11.01 12:39Fabrication of high-quality strain relaxed SiGe(1 1 0) films by controlling defects via ion implantaFabrication of high-quality strain relaxed SiGe(1 1 0) films by controlling defects via ion implantationM. Kato, K. Arimoto, J. Yamanaka, K....
